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| SI6443DQ New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 D TrenchFETr Power MOSFET ID (A) -8.8 - 7.0 rDS(on) (W) 0.012 @ VGS = -10 V 0.019 @ VGS = -4.5 V APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6443DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -30 "20 - 8.8 Steady State Unit V -7.3 -5.9 -30 A -0.95 1.05 0.67 -55 to 150 W _C ID IDM IS PD TJ, Tstg -7.2 -1.35 1.50 1.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72083 S-22385--Rev. A, 30-Dec-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 35 Maximum 83 120 45 Unit _C/W C/W 1 SI6443DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS -5 V, VGS = -10 V VGS = -10 V, ID = -8.8 A VGS = -4.5 V, ID = -7.2 A VDS = -15 V, ID = -8.8 A IS = -1.5 A, VGS = 0 V -20 0.0095 0.0145 30 -0.71 -1.1 0.012 0.019 W S V -1 -3 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.5 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -8.8 A 38 9.3 17.7 25 21 115 68 65 40 35 180 110 100 ns 60 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 3V 12 TC = 125_C 6 25_C -55 _C 2.5 3.0 3.5 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72083 S-22385--Rev. A, 30-Dec-02 2 SI6443DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 5000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 4000 Ciss 3000 2000 Coss 0.005 1000 Crss 0.000 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 8.8 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.8 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 28 42 56 70 1.2 4 1.0 2 0.8 0 0 14 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.064 0.080 On-Resistance vs. Gate-to-Source Voltage 0.048 ID = 8.8 A 1 TJ = 25_C 0.032 0.016 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72083 S-22385--Rev. A, 30-Dec-02 www.vishay.com 3 SI6443DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 60 Single Pulse Power, Junction-to-Ambient 0.6 V GS(th) Variance (V) 50 0.4 Power (W) ID = 250 mA 40 0.2 30 0.0 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 2 10- 1 1 Time (sec) 10 100 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 0.1 1s 10 s dc 0.01 0.1 1 10 100 TC = 25_C Single Pulse VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72083 S-22385--Rev. A, 30-Dec-02 SI6443DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72083 S-22385--Rev. A, 30-Dec-02 www.vishay.com 5 |
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